Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-04-12
2011-04-12
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S482000, C438S486000, C257S066000, C257S070000, C257SE21133, C257SE21324
Reexamination Certificate
active
07923317
ABSTRACT:
To crystallize a material, a thin layer of amorphous or polycrystalline material is deposited on at least one area of the surface of a top part of a substrate. A metal layer is then deposited on at least one area of the thin layer. Thermal treatment is then performed to enable crystalline growth of the material of the thin layer, resulting in:a rapid temperature increase of the top part of the substrate until liquid or overmelted liquid state is achieved,and heat transfer from the interface between the top part of the substrate and the thin layer to the interface between the thin layer and the metal layer.
REFERENCES:
patent: 5994164 (1999-11-01), Fonash et al.
patent: 6278130 (2001-08-01), Joo et al.
patent: 6965122 (2005-11-01), Suzuki et al.
patent: 7192818 (2007-03-01), Lee et al.
patent: 7297982 (2007-11-01), Suzuki et al.
patent: 2004/0137671 (2004-07-01), Kim
patent: 2004/0142543 (2004-07-01), Fukunaga et al.
patent: 2005/0142708 (2005-06-01), Son et al.
patent: 2006/0267073 (2006-11-01), Kato et al.
patent: A-61-068385 (1986-04-01), None
Gerbi et al., “Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies”, Journal of Applied Physics, Jan. 2001, vol. 89, No. 2, pp. 1463-1469.
Hu et al., “Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films”, Japanese Journal of Applied Physics, vol. 45, No. 1A, 2006, pp. 21-27.
Commissariat a l''Energie Atomique
Lee Hsien-Ming
Oliff & Berridg,e PLC
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