Crystallization apparatus using pulsed laser beam

Details Crystallization apparatus using pulsed laser beam Crystallization apparatus using pulsed laser beam

2007-07-24

2007-07-24

Evans, Geoffrey S. (Department: 1725)

Electric heating

Metal heating

By arc

C219S121650

Reexamination Certificate

active

11246265

ABSTRACT:
In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulseoscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

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Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Surface Science Society of Japan, vol. 21, No. 5, Mar. 28, 2000, pp. 34-43.

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