Crystallization apparatus, optical member for use in...

Details Crystallization apparatus, optical member for use in... Crystallization apparatus, optical member for use in...

2006-09-05

2006-09-05

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S201000, C117S202000, C117S203000, C372S022000, C430S005000

Reexamination Certificate

active

07101436

ABSTRACT:
A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

REFERENCES:
patent: 6734635 (2004-05-01), Kunii et al.
patent: 6746942 (2004-06-01), Sato et al.
patent: 2002/0104750 (2002-08-01), Ito
patent: 2003/0099264 (2003-05-01), Dantus et al.
patent: 2003/0231663 (2003-12-01), Ohtsuki et al.
patent: 2004/0005744 (2004-01-01), Taniguchi et al.
patent: 2004/0036969 (2004-02-01), Taniguchi et al.
patent: 2004/0061149 (2004-04-01), Jyumonji et al.
patent: 2004/0126674 (2004-07-01), Taniguchi et al.
patent: 2004/0142544 (2004-07-01), Kimura et al.
patent: 2004/0161913 (2004-08-01), Kawasaki et al.
patent: 2004/0266080 (2004-12-01), Jyumonji et al.
C-H. Oh, et al., Jpn. J. Appl. Phys., vol. 37, Part 2, No. 5A, pp. L492-L495, “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, May 1, 1998.
M. Matsumura, et al., Thin Solid Films, vol. 337, pp. 123-128, “Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices”, 1999.
M. Matsumura, Applied Physics, vol. 71, No. 5, pp. 543-547, “Excimer-Laser-Grown Silicon Thin Films With Ultralarge Grains”, 2002.
W. Yeh, et al., Jpn. J. Appl. Phys., vol. 41, part 1, No. 4A, pp. 1909-1914, “Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films”, Apr. 2002.
M. Nakata, et al., Jpn. J. Appl. Phys., vol. 40, part 1, No. 5A, pp. 3049-3054, “A New Nucleation-Sit-Control Excimer-Laser-Crystallization Method”, May 2001.
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films By Excimer-Laser”, Surface Science, vol. 21, No. 5, pp. 278-287, 2000.
2000-306859, published Nov. 2, 2000.
M. Nakata, et al., “Two-Dimensionally Position-Controlled Ultra-Large Grain Growth Based on Phase-Modulated Excimer-Laser Annealing Method”, Department of Physical Electronics, Tokyo Institute of Technology, Electrochemical Society Proceedings, vol. 2000-31, pp. 148-154.
Wen-Chang Yeh, et al., “Effects of a Low-Melting-Point Underlayer on Excimer-Laser-Induced Lateral Crystallization of Si Thin-Films”, Jpn. J. Appl. Phys. vol. 40 (2001), Part 1,No. 5A, May 2001, pp. 3096-3100.
Y. Sano, et al., “Highly Packed and Ultra-Large Si Grains Grown by a Single-Shot Irradiation of Excimer-Laser Light Pulse”, Department of Physical Electronics, Tokyo Institute of Technology, (8 pages).

Affiliated with

Also associated with

Rating

Crystallization apparatus, optical member for use in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystallization apparatus, optical member for use in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallization apparatus, optical member for use in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3524127