Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Reexamination Certificate
2007-05-08
2007-05-08
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
C117S200000, C117S202000, C117S900000
Reexamination Certificate
active
10949417
ABSTRACT:
The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.
REFERENCES:
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patent: 2000-306859 (2000-11-01), None
Light Intensity Distribution for Large Grain-Growth by Phase-Modulated Excimer-Laser Annealing; Jyumonji, et al; Advanced LCD Technologies Development Center Co., Ltd; pp. 153-156.
Excimer laser-induced temperature field in melting and resolidification of silicon thin films; Hatano, et al; Journal of Applied Physics; vol. 87, No. 1; pp. 36-43.
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Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Surface Science Society of Japan, vol. 21, No. 5, 2000, pp. 278-287.
M. Nakata, et al., “Two-Dimensionally Position-Controlled Ultra-Large Grain Growth Based On Phase-Modulated Excimer-Laser Annealing Method”, Electrochemical Society Proceeding. vol. 2000-31, pp. 148-154.
Y. Sano et al., “Highly Packed and Ultra-Large Si Grains Grown by A Single-Shot Irradiation of Excimer-Laser Light Pulse”, Electrochemical Society Proceedings, vol. 2000-31, pp. 261-268.
Akita Noritaka
Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Hiteshew Felisa
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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