Crystallization apparatus and method; manufacturing method...

Details Crystallization apparatus and method; manufacturing method... Crystallization apparatus and method; manufacturing method...

2008-01-15

2008-01-15

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S202000, C117S900000, C438S795000

Reexamination Certificate

active

11006732

ABSTRACT:
A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.

REFERENCES:
patent: 2002/0079276 (2002-06-01), Miyake
patent: 6-163349 (1994-06-01), None
patent: 2000-505241 (2000-04-01), None
patent: WO 03/092061 (2003-11-01), None
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Suface Science Society of Japan, vol. 21, No. 5, 2000, pp. 278-287.

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