Crystallization apparatus and method; manufacturing method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S202000, C117S900000, C438S795000

Reexamination Certificate

active

11006732

ABSTRACT:
A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.

REFERENCES:
patent: 2002/0079276 (2002-06-01), Miyake
patent: 6-163349 (1994-06-01), None
patent: 2000-505241 (2000-04-01), None
patent: WO 03/092061 (2003-11-01), None
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Suface Science Society of Japan, vol. 21, No. 5, 2000, pp. 278-287.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Crystallization apparatus and method; manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystallization apparatus and method; manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystallization apparatus and method; manufacturing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3934357

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.