Crystalline Si.sub.2 HSb.sub.2

Details Crystalline Si.sub.2 HSb.sub.2 Crystalline Si.sub.2 HSb.sub.2

1992-01-30

1993-10-12

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156623R, 156DIG64, 156DIG94, 156DIG99, 423 87, 423 88, 423344, C30B 700

Patent

active

052521761

ABSTRACT:
This invention relates to a novel method of, and means for, directing energy through Si.sub.2 HSb.sub.2 in such a manner that normal energy parameters can be exceeded. The principal object of the invention is to provide the means for more efficient radiant energy power systems to be constructed. For example, this invention can be applied to construct more efficient rocket propulsion systems.
Si.sub.2 HSb.sub.2 has a crystalline structure with a regular pattern of electron deficiencies which physicists call "holes" in the lattice. Energy can be radiated at the top of the compound and be accelerated as it passes through to a new higher velocity as it expelled out the bottom of the compound. This is accomplished by applying electrical potentials to the sides of the compound which rectify the "holes" in the lattice. The electrical potentials applied to the sides of the compound can be varied to allow the radiated energy output to be directed in the x,y plane. Thus the compound can be used as an excellent propulsion system. It can also be used to enhance any output of a radiated energy source.

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