Crystalline Si.sub.2 HSb.sub.2

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156623R, 156DIG64, 156DIG94, 156DIG99, 423 87, 423 88, 423344, C30B 700

Patent

active

052521761

ABSTRACT:
This invention relates to a novel method of, and means for, directing energy through Si.sub.2 HSb.sub.2 in such a manner that normal energy parameters can be exceeded. The principal object of the invention is to provide the means for more efficient radiant energy power systems to be constructed. For example, this invention can be applied to construct more efficient rocket propulsion systems.
Si.sub.2 HSb.sub.2 has a crystalline structure with a regular pattern of electron deficiencies which physicists call "holes" in the lattice. Energy can be radiated at the top of the compound and be accelerated as it passes through to a new higher velocity as it expelled out the bottom of the compound. This is accomplished by applying electrical potentials to the sides of the compound which rectify the "holes" in the lattice. The electrical potentials applied to the sides of the compound can be varied to allow the radiated energy output to be directed in the x,y plane. Thus the compound can be used as an excellent propulsion system. It can also be used to enhance any output of a radiated energy source.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Crystalline Si.sub.2 HSb.sub.2 does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystalline Si.sub.2 HSb.sub.2, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystalline Si.sub.2 HSb.sub.2 will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1901686

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.