Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-16
2007-10-16
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000, C257SE29117, C257SE29273
Reexamination Certificate
active
09894125
ABSTRACT:
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). Then, the crystalline semiconductor thin film (102) is subjected to a heat treatment at a temperature of 900 to 1200° C. in a reduced atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.
REFERENCES:
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5365875 (1994-11-01), Asai et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5529937 (1996-06-01), Zhang
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5578520 (1996-11-01), Zhang et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5616932 (1997-04-01), Sano et al.
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648276 (1997-07-01), Hara et al.
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5837619 (1998-11-01), Adachi et al.
patent: 5843833 (1998-12-01), Ohtani et al.
patent: 5846869 (1998-12-01), Hashimoto et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5869387 (1999-02-01), Sato et al.
patent: 5879974 (1999-03-01), Yamazaki
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5888857 (1999-03-01), Zhang et al.
patent: 5891764 (1999-04-01), Ishihara et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 5910015 (1999-06-01), Sameshima et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923966 (1999-07-01), Teramoto et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5960323 (1999-09-01), Wakita et al.
patent: 5985681 (1999-11-01), Hamajima et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 5994172 (1999-11-01), Ohtani et al.
patent: 6023074 (2000-02-01), Zhang
patent: 6027960 (2000-02-01), Kusumoto et al.
patent: 6027987 (2000-02-01), Yamazaki et al.
patent: 6054739 (2000-04-01), Yamazaki et al.
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6071796 (2000-06-01), Voutsas
patent: 6077731 (2000-06-01), Yamazaki et al.
patent: 6077758 (2000-06-01), Zhang et al.
patent: 6093587 (2000-07-01), Ohtani
patent: 6093934 (2000-07-01), Yamazaki et al.
patent: 6093937 (2000-07-01), Yamazaki et al.
patent: 6096581 (2000-08-01), Zhang et al.
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6121076 (2000-09-01), Zhang et al.
patent: 6124154 (2000-09-01), Miyasaka
patent: 6140165 (2000-10-01), Zhang et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6197624 (2001-03-01), Yamazaki
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6911698 (2005-06-01), Yamazaki et al.
patent: 7084016 (2006-08-01), Yamazaki et al.
patent: 2001/0036692 (2001-11-01), Yamazaki et al.
patent: 2002/0013114 (2002-01-01), Ohtani et al.
patent: 2002/0100937 (2002-08-01), Yamazaki et al.
patent: 2002/0119633 (2002-08-01), Yamazaki et al.
patent: 2003/0094625 (2003-05-01), Yamazaki et al.
patent: 2006/0051907 (2006-03-01), Yamazaki et al.
patent: 07038113 (1995-02-01), None
patent: 07-130652 (1995-05-01), None
patent: 09186336 (1997-07-01), None
patent: 09-312260 (1997-12-01), None
patent: 10-125927 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
Inventors: Shunpei Yamazaki et al., “Crystalline Semiconductor Thin Film, Method of Fabricating the Same, Semiconductor Device, and Method of Fabricating the Same” Filing Date: Jul. 13, 1999, Specifications and Drawings for U.S. Appl. No. 09/352,362.
Inventors: Shunpei Yamazaki et al., “Crystalline Semiconductor Thin Film, Method of Fabricating the Same, Semiconductor Device, and Method of Fabricating the Same” Filing Date: Jul. 13, 1999, Specifications and Drawings for U.S. Appl. No. 09/352,373.
Inventors: Ohtani Hisashi et al., “Semiconductor Device and Method of Manufacturing the Same” Filing Date: Jul. 20, 2001, Specifications and Drawings for U.S. Appl. No. 09/908,727.
U.S. Appl. No. 09/412,512, including Specification, Drawings and Pending Claims, “Liquid Crystal Display Active Matrix Type Liquid Crystal Display Device, and Method of Driving the Same”, Shunpei Yamazaki, Oct. 5, 1999.
U.S. Appl. No. 09/369,158 “Semiconductor Device and Method of Manufacturing the Same”.
U.S. Appl. No. 09/352,194 “Crystalline Semiconductor Thin Film, Method of Fabricating the Same Semiconductor Device, and Method of Fabricating the Same”.
Final Office Action dated Dec. 24, 2003 for U.S. Appl. No. 09/908,727 filed Jul. 20, 2001.
R. Shimokawa et al.,Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement, Japanese Journal of Applied Physics, vol. 27, No. 5, May. 1988, pp. 751-758.
H. Furue et al., P-78:Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability, SID, 1998, pp. 782-785.
T. Yoshida, 33.2:A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time, SID Digest, 1997; pp. 841-844.
H. Dorin, et al.,Chemistry the Study of Matter, Prentice Hall, Fourth Edition, 1992, p. 532.
Y. Aya, et al.,Improvement of SPC Poly-Si Film Using the ELA Method, 1997 International Workshop on Active-Matrix Liquid-Crystal Displays, Sep. 11-12, 1997, pp. 167-170.
H. Abe, et al.,High-Performance Poly-Crystalline Silicon TFTs Fabricated Using the SPC and ELA Methods, 1998 International Workshop on Active-Matrix Liquid-Crystal Displays, Jul. 9-10, 1998, pp. 85-88.
S. Inul, et al.,Thresholdless Antiferroelectricity in Liquid Crystals and Its Application to Displays, J. Mater. Chem., 1996, pp. 671-673.
Official Action of Mar. 2, 2005 for U.S. Appl. No. 09/908,727 filed Jul. 20, 2001 to Ohtani.
Official Action of Jul. 11, 2005 for U.S. Appl. No. 09/352,373 filed Jul. 13, 1999 to Yamazaki.
Official Action of Mar. 22, 2005 for U.S. Appl. No. 09/352,362 filed Jul. 13, 1999 to Yamazaki.
Ohtani Hisashi
Takano Tamae
Yamazaki Shunpei
Kebede Brook
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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