Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-13
2007-11-13
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S482000, C438S491000, C438S517000
Reexamination Certificate
active
09352373
ABSTRACT:
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature range of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grain boundaries and crystal grains disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.
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Ohtani Hisashi
Takano Tamae
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Toledo Fernando L.
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