Crystalline semiconductor film and method for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S455000

Reexamination Certificate

active

07843010

ABSTRACT:
An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body portion of the island, including the upper surface, and crystal grains in an edge portion of the island, including the sloped side surface, both have average grain sizes that are greater than 0.2 μm.

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International Search Report mailed Jul. 26, 2005 (Japanese and English Translation).
English translation of the International Preliminary Report on Patentability mailed Apr. 12, 2007 in corresponding PCT Application No. PCT/JP2005/011372.

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