Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2010-11-30
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S455000
Reexamination Certificate
active
07843010
ABSTRACT:
An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body portion of the island, including the upper surface, and crystal grains in an edge portion of the island, including the sloped side surface, both have average grain sizes that are greater than 0.2 μm.
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International Search Report mailed Jul. 26, 2005 (Japanese and English Translation).
English translation of the International Preliminary Report on Patentability mailed Apr. 12, 2007 in corresponding PCT Application No. PCT/JP2005/011372.
Kimura Tomohiro
Yasumatsu Takuto
Garber Charles D
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Stevenson Andre′ C
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