Crystalline film and its manufacture method using laser

Details Crystalline film and its manufacture method using laser Crystalline film and its manufacture method using laser

2005-04-04

2008-12-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S197000, C438S463000, C438S488000, C257SE21170, C257SE21051, C257SE21347, C257SE21475, C257SE21562

Reexamination Certificate

active

07470602

ABSTRACT:
A workpiece object is prepared which has a thin film on the surface and made of amorphous material. A pulse laser beam is applied to the thin film, the pulse laser beam having an elongated beam cross section along one direction on the surface of the thin film. With this pulse laser beam, the thin film is melted and thereafter the thin film is solidified to form crystal grains framing chains along a long axis direction of a beam incidence region in first stripe regions. The first stripe regions extend along the long axis direction in regions of the beam incidence region between its center line and borders of the beam incidence region extending along the long axis direction, and are spaced apart from the borders and the center line by a predetermined distance.

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