Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-31
2011-11-22
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S689000
Reexamination Certificate
active
08062978
ABSTRACT:
Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
REFERENCES:
patent: 6355519 (2002-03-01), Lee
patent: 6774050 (2004-08-01), Ahn et al.
patent: 6831010 (2004-12-01), Beekman et al.
Choi Sang-moo
Park Sang-jin
Seol Kwang-soo
Shin Woong-chul
Sung Jung-hun
Culbert Roberts
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co., Inc.
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