Crystal thin film and production method therefor

Details Crystal thin film and production method therefor Crystal thin film and production method therefor

2005-01-18

2005-01-18

Norton, Nadine G. (Department: 1765)

Stock material or miscellaneous articles

Composite

Of quartz or glass

C428S411100, C117S084000, C117S088000, C117S101000

Reexamination Certificate

active

06844074

ABSTRACT:
A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

REFERENCES:
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patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5932281 (1999-08-01), Hochido et al.
patent: 6290735 (2001-09-01), Kambe et al.
patent: 05215929 (1993-08-01), None
patent: 08110425 (1996-04-01), None
Abstracts of Japan. Abstract of JP 08-110425 (1996).*
Abstracts of Japan. Abstract of JP 05-215929 (1993).

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