Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1996-12-11
1998-12-22
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117202, 117900, C30B 3500
Patent
active
058512861
ABSTRACT:
A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
REFERENCES:
patent: 3165571 (1965-01-01), Grimes, Jr.
patent: 5370077 (1994-12-01), Hirano et al.
patent: 5593498 (1997-01-01), Kimbel et al.
Harada Isamu
Kakegawa Tomohiro
Nakano Hideki
Ozaki Atsushi
Urano Masahiko
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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