Crystal manufacturing method

Details Crystal manufacturing method Crystal manufacturing method

2007-08-14

2007-08-14

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S509000, C438S763000, C148SDIG011, C117S089000, C117S952000

Reexamination Certificate

active

10504527

ABSTRACT:
A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.

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