Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2008-04-15
2008-04-15
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S149000, C438S150000, C438S166000, C438S455000, C438S458000, C438S479000, C438S481000, C438S482000
Reexamination Certificate
active
07358164
ABSTRACT:
Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.
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Hsu Louis Lu-Chen
Mandelman Jack Allan
Tonti William Robert
Au Bac H
International Business Machines - Corporation
Smith Zandra
Wood Herron & Evans LLP
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