Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1997-05-27
1999-05-11
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117911, C30B35/00
Patent
active
059023970
ABSTRACT:
In an apparatus for the production of single crystals (103) by the Czochralski melt drawing method, a gripping device (125a, 125b) is provided, by means of which the crystal (103) is held during the growing process by a pressure which is exerted radially on its lateral surface and which exceeds the frictional resistance, as a result of which the weight of the growing crystal is completely supported. The gripping device (125a, 125b) has at least two holding devices (128a, 128b) arranged opposite each other, which, during the crystal growth phase, initially move parallel to the crystal and then, after a certain desired crystal diameter has been reached, are laid against the crystal by means of the holding devices (128a, 128b) in such a way that the growth the crystal in the area of the melting zone is not disturbed.
REFERENCES:
patent: 4190630 (1980-02-01), Apilat et al.
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5173270 (1992-12-01), Kida et al.
patent: 5176490 (1993-01-01), Ibe
JP 4-321583 A., In: Patents Abstracts of Japan, C-1041, Mar. 29, 1993, vol. 17, No. 158.
Kaiser Helmut
Schulman Winfried
Thimm Franz
Hiteshew Felisa
Leybold Systems GmbH
LandOfFree
Crystal holder does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystal holder, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal holder will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243593