Crystal growth procedure

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156617R, 156624, 156DIG71, 156DIG78, 423499, 423497, 2523014H, B01J 1708, C01F 1120, C01D 130, C01D 320

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active

040309657

ABSTRACT:
Inorganic macrocrystals are grown free of occluded gases in a quiescent melt in a Bridgmann, Stockbarger, or similar furnace by melting down the crystal feed stock under a reduced atmosphere composed primarily of a low molecular weight gas such as hydrogen, helium or neon having the ability to diffuse through the melt at a greater rate than that of nitrogen. The gas can also include a minor amount of one or more active scavenger gases. During crystal growth, the gas atmosphere over the melt is altered by replacing the low molecular weight gas with an inert gas having a lower solubility in the melt than that of the low molecular weight gas or by increasing the pressure of the low molecular weight gas at a specified point in the growth process to significantly increase the concentration needed to form bubbles in the melt and to retard evaporation of the melt.

REFERENCES:
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patent: 3926566 (1975-12-01), Spurney
Butler et al., A Method for Purif. and Growth of KCl Single Crystals, ORNL-3906, Feb. '66, p. 39.
Hinks et al., Journal of Crystal Growth, 15, No. 3, 1972, pp. 227-230.

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