Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1979-05-31
1982-02-16
Bernstein, Hiram
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156622, C30B 2502
Patent
active
043157963
ABSTRACT:
A compound semiconductor mixed crystal is grown by causing semiconductor-constituent material to travel, in dissolved liquid phase, through a solution having a portion contacting the source material and held at a constant high temperature and another portion wherein growth of the mixed crystal takes place and held at a constant low temperature, while externally applying onto the surface of said solution vapor pressures of the material-constituting separately generated volatile elements. The vapor pressures of such volatile elements applied to the solution are determined by the measurement, as a function, of at least one physical property of the mixed crystal thus produced. Optimum vapor pressures of these elements may be effectively determined by successively growing, under the same conditions, two layers forming a light-emitting diode and by measuring the luminance of this diode. Mixed crystals grown by this method under optimum vapor pressures provide excellent performance as indicated by various physical properties.
REFERENCES:
patent: 3301637 (1967-01-01), Kucza
patent: 3902860 (1975-09-01), Akai
Nishizawa et al., Hot Crystal Growth 31, (1975) pp. 215-222.
Bernstein Hiram
Zaidan Hojin Handotai Kenkyu Shinkokai
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