Crystal growth method of oxide, cerium oxide, promethium...

Details Crystal growth method of oxide, cerium oxide, promethium... Crystal growth method of oxide, cerium oxide, promethium...

2005-08-09

2005-08-09

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S300000, C257S310000

Reexamination Certificate

active

06927436

ABSTRACT:
An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

REFERENCES:
patent: 6140672 (2000-10-01), Arita et al.
patent: 6194754 (2001-02-01), Aggarwal et al.

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