Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-12-05
1990-08-07
Andrews, Melvyn J.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
15661641, 156DIG93, 422248, C30B 2700, C30B 2900
Patent
active
049465422
ABSTRACT:
In a VGF process for growing a large single crystal 16' in a crucible 11, the problem of stress forces caused by a freezing liquid encapsulant are solved by using a step or indentation 21 around the inner surface of the crucible 11 at or near the top of the single crystal 16' being grown. As a consequence, the newly-frozen single crystal (e.g., InP)conforms to the shape of the indented inner surface of the crucible and therefore has a pronounced bulge 22 near its top. The bulge of the frozen semiconductor crystal then nests against the indentation on the periphery of the crucible, thereby to prevent any liquid encapsulant from flowing between the crystal and the wall of the crucible.
REFERENCES:
patent: 4404172 (1983-09-01), Gault
patent: 4632686 (1986-12-01), Brown et al.
B. A. Joyce, "Growth of Single Crystals of GaAs in Bulk and Thin Film Form" included in the book, Crystal Growth, edited by B. R. Pamplin, Permanon Press, 1975, pp. 157-184.
J. B. Mullin et al., "Liquid Encapsulation Techniques: The Use of an Inert Liquid in Suppressing Dissociation During the Melt-Growth of InAs and GaAs Crystals" included in the Journal of Physical Chem. Solids, vol. 26, pp. 782-784, 1965.
H. H. Woodbury, "Vertical-Gradient-Freeze Growth of GaP" included in the Journal of Crystal Growth, vol. 35, pp. 49-54, 1976.
Anderson Roderick B.
Andrews Melvyn J.
AT&T Bell Laboratories
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