Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-01-28
1994-03-01
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156610, 156614, 437127, 437133, C30B 2522
Patent
active
052903931
ABSTRACT:
Crystals of a gallium nitride-based compound semiconductor are grown on the surface of a buffer layer represented by formula Ga.sub.X Al.sub.1-X N (0<.times..ltoreq.1). The crystallinity of the gallium nitride-based compound semiconductor grown on the surface of the buffer layer can be drastically improved.
REFERENCES:
patent: 3683240 (1972-08-01), Parkove
patent: 3829556 (1974-08-01), Logan et al.
patent: 4153905 (1979-05-01), Charmakadze et al.
patent: 4473938 (1984-10-01), Kobayashi et al.
patent: 4476620 (1984-10-01), Ohki et al.
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 5122845 (1992-06-01), Manabe et al.
Japanese Journal of Applied Physics vol. 28, No. 12, Dec., 1989 pp. L2112-L2114.
Journal of Crystal Growth 98 (1989) 209-219.
Solid State Communications, vol. 60, No. 6, pp. 509-512, 1886.
Appl. Phys. Lett. 48(5), 3 Feb. 1986, pp. 353-355.
Thin Solid Films, 163(1988) 415-420.
Appl. Phys. Lett. 42(5), 1 Mar. 1983, pp. 427-429.
Journal of Japan Crystal Growth Association vol. 13, No. 4, 1986, pp. 218-225.
Patent Abstracts of Japan vol. 015, No. 003 (E-1019) Jan. 1991 & JP-A-02 257 678 (Univ. Nagoya) Oct. 1990 Isambu.
Extended Abstracts vol. 87-2, Oct. 1987, Princeton, N.J., U.S. pp. 1602-1603 Nagatomo "Epitaxial growth of GaN films by low pressure . . . deposition" Patent Abstracts of Japan vol. 014, No. 263 (E-0938) Jun. 1990 & JP-A-02 081 483 (Manabe Katsushide) Mar. 1990.
Kunemund Robert
Nichia Kagaku Kogyo K.K.
LandOfFree
Crystal growth method for gallium nitride-based compound semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Crystal growth method for gallium nitride-based compound semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method for gallium nitride-based compound semicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-573882