Crystal growth method and crystalline article obtained by said m

Details Crystal growth method and crystalline article obtained by said m Crystal growth method and crystalline article obtained by said m

1991-04-04

1993-05-04

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148562, 156612, 156613, 156614, 156DIG111, 437 11, 437 89, 437100, 437173, C30B 2500

Patent

active

052078639

ABSTRACT:
A crystal growth method for crystallizing an amorphous thin film comprises heat-treating an amorphous thin film having a region (I) with a predetermined film thickness and a region (II) with a larger film thickness than the region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth at a temperature not higher than the melting point of the film.

REFERENCES:
patent: 3585008 (1971-06-01), Schwuttke et al.
patent: 3830668 (1974-08-01), Dearnaley et al.
patent: 3976512 (1976-08-01), DeNora et al.
patent: 4378629 (1983-04-01), Bozler et al.
patent: 4383883 (1983-05-01), Mizutani
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4693759 (1987-09-01), Noguchi et al.
Patent Abstracts of Japan, vol. 10, No. 58 (E-386) [2115] (Mar. 7, 1986) and JP-60211822.
T. Noguchi, et al. "Polysilicon Super Thin Film Transistor Technology," Materials Research Society Symposium Proceedings, vol. 106, Polysilicon and Interfaces, pp. 293-304 (1988).

Affiliated with

Also associated with

Rating

Crystal growth method and crystalline article obtained by said m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method and crystalline article obtained by said m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method and crystalline article obtained by said m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972824