Crystal growth method and apparatus

Details Crystal growth method and apparatus Crystal growth method and apparatus

1990-03-09

1991-11-12

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156667, 1566162, 1566163, 1566164, 15661641, 156DIG70, 156DIG83, 422248, 164122, 1641221, 1641222, C30B 1114

Patent

active

050644971

ABSTRACT:
In a compound semiconductor crystal growth process, the crucible (11) that contains the semiconductor melt is contacted on its opposite surface by a material (26) which, when melted, reacts with the crucible. The reacting material is melted along with the compound semiconductor material and thereafter reacts with the wall (24) of the crucible that contains the semiconductor melt. During the entire growth process, the wall is sufficiently thick to separate the reacting material from the compound semiconductor material, but is sufficiently thin that the reacting material significantly weakens its structural integrity. As a consequence, thermal stresses resulting from differential contraction of the compound semiconductor material and the wall during the cooling step are relieved by fracture of the crucible wall.

REFERENCES:
patent: 2361382 (1944-10-01), Camin
patent: 2908739 (1959-10-01), Rummel
patent: 3240568 (1966-03-01), Desby et al.
patent: 3649193 (1972-03-01), Deyris
patent: 3898051 (1975-08-01), Schmid
patent: 4404172 (1983-09-01), Gault
patent: 4904336 (1990-02-01), Ozawa et al.
patent: 4946542 (1990-08-01), Clemans
"A Novel Application of the Vertical Gradient Freeze Method to the Growth of High Quality III-V Crystals," by W. A. Gault et al., Journal of Crystal Growth, vol. 74, 1986, pp. 491-506.

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