Crystal growth method and apparatus

Details Crystal growth method and apparatus Crystal growth method and apparatus

1991-01-28

1992-06-23

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566162, 1566163, 1566164, 15661641, 156DIG98, C30B 1500

Patent

active

051239965

ABSTRACT:
In growing ingots of crystalline semiconductor material in a crucible, a seed crystal (35) contains a slot (36) which meshes with a wall portion (33) of the crucible for fixing the crystal orientation of the seed crystal with respect to the crucible. The crucible contains crystallographic reference flats (26 and 27) which are manifested as reference flats (26' and 27') of wafers cut from ingots grown in the crucible. The slots (36) in the seed crystal can be formed by forming slots (39) in a larger crystal (38) from which the seed crystals (35) are formed by coring.

REFERENCES:
patent: 4343662 (1982-08-01), Gay
patent: 4404172 (1983-09-01), Gault
patent: 4946542 (1990-08-01), Clemans
patent: 4966645 (1990-10-01), Shahid
VLSI Fabrication Principles: Silicon & Gallium Arsenide; Ghandhi; Chapter 1; Material Properties pp. 10-11; John Wiley & Sons (1983).
"Review of Chemical Polishing of Semiconductors," B. Tuck, Journal of Materials Science, vol. 10, 1975, pp. 321-339.

Affiliated with

Also associated with

Rating

Crystal growth method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crystal growth method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crystal growth method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-930803