Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-12-04
1990-10-30
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
15661641, C30B 1114
Patent
active
049666452
ABSTRACT:
The major portion of the crucible in which a compound semiconductor ingot is grown has an inner surface which, in a section taken transverse to the crucible axis, substantially defines an ellipse. As a consequence, the ingot grown in the crucible has an elliptical cross-section. After the ingot is removed from the crucible, it is cut at an angle with respect to the central axis of the ingot and in the direction of the minor axis of the ellipse defining the ingot cross-section. Wafers cut from the ingot will have a circular periphery if the sine of the angle at which they are cut substantially equals y.div.x where y is the thickness of the ingot along the minor axis of the ellipse, and x is the thickness of the ingot along the major axis of the ellipse.
REFERENCES:
patent: 4054010 (1977-10-01), Shipman
patent: 4224099 (1980-09-01), McGill
patent: 4344260 (1982-08-01), Ogiwara
patent: 4404172 (1983-09-01), Gault
patent: 4488930 (1984-12-01), Koe
patent: 4666681 (1987-05-01), Ferrand et al.
"A Novel Application of the Vertical Gradient Freeze Method to the Growth of High Quality III-V Crystals," by W. A. Gault, et al., Journal of Crystal Growth, vol. 74, 1986, pp. 491-506.
Anderson Roderick B.
AT&T Bell Laboratories
Kalinchak Stephen G.
Straub Gary P.
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