Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-09-23
1990-05-08
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
15662070, 156DIG70, 156DIG81, C30B 1102, C30B 3500
Patent
active
049235613
ABSTRACT:
In a vertical gradient freeze (VGF) process for growing a large crystal of a Group III-V compound semiconductor in a pyrolytic boron nitride crucible (11), a major part of the inner surface of the crucible is first oxidized to form a boric oxide layer (12).
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patent: 4528061 (1985-07-01), Miyazawa et al.
Finicle, R. L., "Union Carbide Technical Bulletin-Advanced Ceramics", 10-16-86.
B. A. Joyce, "Growth of Single Crystals of GaAs in Bulk and Thin Film Form", included in the book, Crystal Growth edited by B. R. Pamplin, Pergamon Press, 1975, pp. 157-184.
W. D. Lawson et al., "Semiconducting Compounds", included in the book, The Art and Science of Growing Crystals, edited by J. J. Gilman, John Wiley & Sons, New York, 1963, pp. 365-391.
J. B. Mullin et al., "Liquid Encapsulation Techniques: The Use of an Inert Liquid in Suppressing Dissociation during the Melt-Growth of InAs and GaAs Crystals", included in the Journal of Physical Chem. Solids, vol. 26, pp. 782-784, 1965.
Crystal Growth, B. R. Pamplin, Pergamon Press, 1975, p. 389.
"The Origins of Twinning in CdTe", A. W. Vere et al., Journal of Electronic Materials, vol. 12, No. 3, 1983, pp. 551-560.
Chemans Jim E.
Monberg Eric M.
American Telephone and Telegraph Company
Anderson R. B.
Franklin M.
Straub Gary P.
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