Crystal growth method

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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15662070, 156DIG70, 156DIG81, C30B 1102, C30B 3500

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active

049235613

ABSTRACT:
In a vertical gradient freeze (VGF) process for growing a large crystal of a Group III-V compound semiconductor in a pyrolytic boron nitride crucible (11), a major part of the inner surface of the crucible is first oxidized to form a boric oxide layer (12).

REFERENCES:
patent: 4265661 (1981-05-01), Ware
patent: 4404172 (1983-09-01), Gault
patent: 4528061 (1985-07-01), Miyazawa et al.
Finicle, R. L., "Union Carbide Technical Bulletin-Advanced Ceramics", 10-16-86.
B. A. Joyce, "Growth of Single Crystals of GaAs in Bulk and Thin Film Form", included in the book, Crystal Growth edited by B. R. Pamplin, Pergamon Press, 1975, pp. 157-184.
W. D. Lawson et al., "Semiconducting Compounds", included in the book, The Art and Science of Growing Crystals, edited by J. J. Gilman, John Wiley & Sons, New York, 1963, pp. 365-391.
J. B. Mullin et al., "Liquid Encapsulation Techniques: The Use of an Inert Liquid in Suppressing Dissociation during the Melt-Growth of InAs and GaAs Crystals", included in the Journal of Physical Chem. Solids, vol. 26, pp. 782-784, 1965.
Crystal Growth, B. R. Pamplin, Pergamon Press, 1975, p. 389.
"The Origins of Twinning in CdTe", A. W. Vere et al., Journal of Electronic Materials, vol. 12, No. 3, 1983, pp. 551-560.

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