Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-02-27
1990-08-07
Straub, Gary P.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566162, 1566163, 156607, 156DIG70, 422248, C30B 1102, C30B 1700, C30B 2700, C30B 2940
Patent
active
049465449
ABSTRACT:
The problem of spurious inclusions of excess Group V material in the growth of III-V crystals is reduced by including, along with the raw material (12) in the crucible, a quantity (13) of the elemental Group V material and encapsulating with boric oxide (14). The crucible is contained within a growth vessel (19) which is in turn contained within a pressure vessel (16) which is first evacuated and then filled to a high pressure with an inert gas such as argon. The inert gas is one which is lighter in weight than the vaporized Group V material, and which is at a higher pressure than the equilibrium pressure of the vaporized Group V material at the melting temperature of the III-V compound. The vaporized Group V material displaces the argon in the growth vessel (19). The inventive process also reduces defects in the grown crystal.
REFERENCES:
patent: 3301637 (1967-01-01), Kucza et al.
patent: 3520810 (1970-07-01), Plaskett et al.
patent: 3649193 (1972-03-01), Deyris
patent: 3877883 (1975-04-01), Berkman et al.
patent: 3898051 (1975-08-01), Schmid
patent: 4404172 (1983-09-01), Gault
patent: 4840699 (1989-06-01), Khattak et al.
Bachmann, K. J. and Buehler, E., "Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InP," J. Electrochem. Soc.: Solid-State Science and Technology, vol. 121, No. 6, Jun. 1974, pp. 835-846.
Pamplin, Brian R., "Growth of Single Crystals of GaAs in Bulk and Thin Film Form," Crystal Growth, Pergamon Press Ltd., 1975, p. 165.
Anderson Roderick B.
AT&T Bell Laboratories
Straub Gary P.
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