Crystal growth combining float zone technique with the water coo

Details Crystal growth combining float zone technique with the water coo Crystal growth combining float zone technique with the water coo

1973-12-26

1976-02-03

Sofer, Jack

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23273SP, B01J 1710

Patent

active

039363465

ABSTRACT:
The disclosure relates to the growth of single crystal material from polycrystalline material by combining the pedestal and cold crucible techniques to yield a method of producing large, high purity single crystals on a commercial scale. The method includes feeding a bar of polycrystalline material, such as silicon, into a cold cage which can be a cold silver crucible or the like having an aperture in the bottom thereof to permit insertion of the polycrystalline feed bar. An RF coil surrounds the cold cage and melts the silicon as it reaches into the cage, the RF coil providing a temperature to the silicon material which is slightly above the melting point thereof. A rod of single crystal material, the same as the feed bar, is positioned in the melt from the top surface of the cold cage and acts as a seed crystal. The single crystal rod is then pulled upwardly from the cage while polycrystalline silicon is fed into the cage through the aperture in the bottom thereof. By continuously forcing the polycrystalline rod into the cage and pulling a rod at the top of the cage, a large single crystal can be grown while maintaining only a small melt volume. The diameter of the single crystal rod being pulled will have a relation to the upper diameter of the cold cage as well as the ratio of the feed rate of the polycrystalline bar relative to the pull rate of the single crystalline bar.

REFERENCES:
patent: 2686864 (1954-08-01), Wroughton et al.
patent: 2876147 (1959-03-01), Kniepkamp et al.
patent: 2985519 (1961-05-01), Kelemen

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