Crystal growth and anneal of lead tin telluride by recrystalliza

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156624, 156605, 156DIG72, 156DIG85, 156DIG73, 148133, 252 623V, 423508, B01J 1702, C01G 2100, C01B 1900

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active

040765725

ABSTRACT:
Large bulk single crystals of lead tin telluride are synthesized by first mixing desired amounts of lead, tin and tellurium with, if desired, bismuth and reacting the mixture at 950.degree. C to form a source material. The source material is then converted into a single crystal by recrystallization and digestion in a uniform 850.degree. C to 860.degree. C temperature zone in order to prevent transport of material and, hence, variations in composition. Thereafter, these crystals, which are doped with bismuth, or crystals made by Bridgman or Czochralski growth, are cut into wafers and isothermally annealed at 600.degree. C to 650.degree. C under a metal-rich vapor pressure obtained from metal-rich lead tin telluride powder. Lowering of temperature to about 200.degree. C and further annealing is capable of converting p-type crystals to n-type crystals. The result of annealing, whether p-type, n-type, or intrinsic, is a low carrier concentration, high mobility crystal.

REFERENCES:
patent: 3622399 (1971-11-01), Johnson
patent: 3622405 (1971-11-01), Schmidt
patent: 3748593 (1973-07-01), Dimmock
Calawa, Trans. of the Metal. Soc. of AIME, vol. 242, Mar. 1968, pp. 374-383.
Butler et al., Chem. Abstr., vol. 71, 1969, col. 26495 (269491b).

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