Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-12-09
1994-03-22
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156612, 156614, 156DIG70, 156DIG88, 437 83, 437 84, 437 89, C30B 2512
Patent
active
052960870
ABSTRACT:
A crystal formation method is disclosed which is a crystal growth method comprising feeding two or more kinds of reactive starting gases alternately into a crystal formation treatment space having a substrate with a non-nucleation surface (S.sub.NDS) having small nucleation density and a nucleation surface (S.sub.NDL) having sufficiently small area for crystal growth only from a single nucleus, and larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) being arranged adjacent to each other arranged therein, thereby permitting a monocrystal to grow selectively from said single nucleus, characterized in that when one of the starting gases is changed over to the other starting gas, the reaction vessel is once evacuated internally to 10.sup.-2 Torr or less.
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Jastrzebski et al. "Growth Process of Silicon over SiO.sub.2 by CVD: ELO technique" J. Electrochem Soc. Jul. 1983 pp. 1571-1580.
Claassen et al. "The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates" J. Electrochem Soc. Jan. 1980 pp. 194-202.
Nishizawa et al. "Crystal Growth by Atomic Layer Epitaxy" Tohoku University Jan. 23, 1984.
Canon Kabushiki Kaisha
Kunemund Robert
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