Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-08-13
2000-05-02
McDonald, Rodney G.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20429812, 20429813, 148577, C23C 1434
Patent
active
060568577
ABSTRACT:
Sputtering targets are cryogenically annealed to provide a uniformly dense molecular structure by placing the target in a temperature-controlled cryogenic chamber and cooling the chamber to a cryogenic temperature at a controlled rate. The target is maintained at a cryogenic temperature to cryogenically anneal the target and the target is subsequently returned to ambient or elevated temperature. Improvements in sputtered particle performance and early life film uniformity are achieved with the cryo-annealed targets.
REFERENCES:
patent: 2949392 (1960-08-01), Willey et al.
patent: 5160388 (1992-11-01), Legresy et al.
Draper Darryl
Gilman Paul S.
Hunt Thomas J.
Joyce James E.
Lo Chi-Fung
McDonald Rodney G.
Praxair S.T. Technology, Inc.
LandOfFree
Cryogenic annealing of sputtering targets does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cryogenic annealing of sputtering targets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cryogenic annealing of sputtering targets will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1591346