Crucible for growing single crystals, process for making the sam

Details Crucible for growing single crystals, process for making the sam Crucible for growing single crystals, process for making the sam

1998-01-09

1999-11-30

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117220, C30B 1510

Patent

active

059935456

ABSTRACT:
A sintered rhenium crucible, highly suitable for growing single crystals from refractory metal oxides, for example by the Czochralski technique, is formed of fine rhenium powder, by sintering. A compact is formed by cold isostatic pressing and thereafter the compact is sintered at 500-2800.degree. C. to obtain a sintered crucible. Product density is limited to 88-95% of theroretical in order to maximize creep resistance.

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