Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-02-27
2007-02-27
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S053000, C365S054000, C365S065000, C365S130000, C257S340000, C257S508000, C257S659000
Reexamination Certificate
active
10976241
ABSTRACT:
A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.
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Aizawa Hiroyuki
Hasegawa Kazumasa
Harness & Dickey & Pierce P.L.C.
Pham Ly Duy
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