Crossed grain growth

Details Crossed grain growth Crossed grain growth

1975-12-31

1978-10-17

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG88, B01J 1712

Patent

active

041207432

ABSTRACT:
A method of producing a sheet of semiconductor material directly usable for the production of solar cells is disclosed. The method comprises establishing a molten region at an edge of a sheet of semiconductor material, moving the molten region across the sheet to create a path of elongated crystal grains, establishing a molten zone along a portion of the path of the elongated crystal grains and parallel thereto, and causing the molten zone to travel in a direction transverse to the path of elongated crystal grains.

REFERENCES:
patent: 2897329 (1959-07-01), Matare
patent: 3092462 (1963-06-01), Goorissen
patent: 3096158 (1963-07-01), Gaule
patent: 3287107 (1966-11-01), Eaton
patent: 3591423 (1971-07-01), Kawamura
patent: 3900943 (1975-08-01), Sirtle
patent: 3903325 (1975-09-01), Horiuchi

Affiliated with

Also associated with

Rating

Crossed grain growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crossed grain growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crossed grain growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-374062