Crossbar array microelectronic electrochemical cells

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S295000, C257S296000, C257S315000, C257SE27004, C438S257000, C438S593000, C365S065000, C365S117000

Reexamination Certificate

active

11166938

ABSTRACT:
The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the crossing surrounded by a dielectric material. A portion of the dielectric material around the crossing of the first and second conductors is removed to form a well that exposes respective outer surfaces of the first and second conductors and a molecule is deposited in the well such that the deposited molecule contacts the exposed outer surfaces of the first and second conductors.

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