Cross reference to related application

Details Cross reference to related application Cross reference to related application

2005-08-16

2005-08-16

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S660000, C438S675000

Reexamination Certificate

active

06930045

ABSTRACT:
The method comprises the step of forming a diffusion preventing film16and an insulation film18on an insulation film12formed on a substrate10and having a Cu interconnection layer14buried in; the step of forming a contact hole20in the insulation film18down to the Cu interconnection layer14;the step of cleaning the substrate10with the contact hole20formed with a chemical liquid; the step of drying the substrate10cleaned with the chemical liquid; and the step of annealing the dried substrate in a reducing atmosphere.

REFERENCES:
patent: 6821902 (2004-11-01), Inoue et al.
patent: 2003/0114000 (2003-06-01), Noguchi
patent: 2004/0051180 (2004-03-01), Kado et al.
patent: 2004/0200728 (2004-10-01), Hongo et al.
patent: 2004/0241985 (2004-12-01), Mishima et al.
patent: 08064514 (1996-03-01), None
patent: 09275085 (1997-10-01), None

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