Cross-point RRAM memory array having low bit line crosstalk

Details Cross-point RRAM memory array having low bit line crosstalk Cross-point RRAM memory array having low bit line crosstalk

2007-06-26

2007-06-26

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S205000, C365S207000, C365S158000

Reexamination Certificate

active

11283135

ABSTRACT:
A cross-point RRAM memory array includes a word line array having an array of substantially parallel word lines therein and a bit line array having an array of substantially parallel bit lines therein, wherein said bit lines are substantially perpendicular to said word lines, and wherein a cross-point is formed between said word lines and said bit lines. A memory resistor located between said word lines and said bit lines at each cross-point. A high-open-circuit-voltage gain, bit line sensing differential amplifier circuit located on each bit line, including a feedback resistor and a high-open-circuit-voltage gain amplifier, arranged in parallel, wherein a resistance of the feedback resistors is greater than a resistance of any of the memory resistors programmed at a low resistance state.

REFERENCES:
patent: 6490190 (2002-12-01), Ramcke et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6858905 (2005-02-01), Hsu et al.
patent: 2004/0170048 (2004-09-01), Hsu
patent: 2005/0128796 (2005-06-01), Hoffmann

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