Cross point resistive memory array

Details Cross point resistive memory array Cross point resistive memory array

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

07002197

ABSTRACT:
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.

REFERENCES:
patent: 3841904 (1974-10-01), Chiang
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6462388 (2002-10-01), Perner

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