Cross-point MRAM array with reduced voltage drop across MTJ's

Details Cross-point MRAM array with reduced voltage drop across MTJ's Cross-point MRAM array with reduced voltage drop across MTJ's

2005-08-16

2005-08-16

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

06930915

ABSTRACT:
A method of storing information in a cross-point magnetic memory array and a cross-point magnetic memory device structure. The voltage drop across magnetic tunnel junctions (MTJ's) during a write operation is minimized to prevent damage to the MTJ's of the array. The voltage drop across the selected MTJ's, the unselected MTJ's, or both, is minimized during a write operation, reducing stress across the MTJ's, decreasing leakage currents, decreasing power consumption and increasing the write margin.

REFERENCES:
patent: 6052302 (2000-04-01), Moyer et al.
patent: 6747891 (2004-06-01), Hoffmann et al.
patent: 2002/0003720 (2002-01-01), Bohm et al.
patent: 2002/0021643 (2002-02-01), Gogi et al.
patent: 2002/0024875 (2002-02-01), Bohm et al.

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