Cross point memory array exhibiting a characteristic hysteresis

Details Cross point memory array exhibiting a characteristic hysteresis Cross point memory array exhibiting a characteristic hysteresis

2006-01-31

2006-01-31

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S157000, C365S185240, C365S046000, C365S048000

Reexamination Certificate

active

06992922

ABSTRACT:
Providing a cross point memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory plug have substantially no effect on the resistive state and below which a voltage pulse will alter the resistance of the memory plug. Similarly, in the high resistive state, the second write threshold voltage is the point below which any voltages applied across the memory plug have substantially no effect on the resistive state and above which a voltage pulse will alter the resistance of the memory plug. The read voltages applied to the memory plug are typically above the first write threshold voltage and lower than the second write threshold voltage.

REFERENCES:
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6504221 (2003-01-01), Tran
patent: 6531371 (2003-03-01), Hsu et al.

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