Cross-point ferroelectric memory that reduces the effects of...

Details Cross-point ferroelectric memory that reduces the effects of... Cross-point ferroelectric memory that reduces the effects of...

2007-03-20

2007-03-20

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S200000

Reexamination Certificate

active

10884762

ABSTRACT:
A memory constructed from a dielectric layer sandwiched between a plurality of word conductors and a plurality of bit line conductors is disclosed. The dielectric layer includes a layer of ferroelectric material, and has first and second surfaces. The word conductors are located on the first surface. Each word conductor is connected to a corresponding word line driving circuit. The bit line conductors are located on the second surface. Each bit line conductor is connected to a corresponding bit line driving circuit and a corresponding sense amplifier by one or more disconnect switches. A disconnect switch is set to an open state if the bit line conductor connected to that disconnect switch is shorted to one of the word conductors.

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patent: WO-03/001532 (2003-01-01), None

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