Cross-point contact-free array with a high-density floating-gate

Details Cross-point contact-free array with a high-density floating-gate Cross-point contact-free array with a high-density floating-gate

1991-06-27

1993-08-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, H01L 21265, H01L 21465

Patent

active

052388557

ABSTRACT:
A contact-free floating-gate non-volatile memory cell array and process with silicided NSAG bitlines and with source/drain regions buried beneath relatively thick silicon oxide. The bitlines have a relatively small resistance, eliminating the need for parallel metallic conductors with numerous bitline contacts. The array has relatively small bitline capacitance and may be constructed having relatively small dimensions. Bitline isolation is by P/N junction or by oxide-filled trench, permitting relatively small spacing between transistors. Wordlines may be formed from silicided polycrystalline or other material with low resistivity. Coupling of programming and erasing voltages to the floating gate is improved by using an insulator with relatively high dielectric constant between the control gate and the floating gate. The resulting structure is a dense cross-point array of programmable memory cells.

REFERENCES:
patent: 4151537 (1979-04-01), Goldman et al.
patent: 4326331 (1982-04-01), Guterman
patent: 4379343 (1983-04-01), Moyer
patent: 4426764 (1984-01-01), Kosa et al.
patent: 4434433 (1984-02-01), Nishizawa
patent: 4455568 (1984-06-01), Shiota
patent: 4471373 (1984-09-01), Shimizu
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4652897 (1987-03-01), Okuyama et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4763177 (1988-08-01), Paterson
patent: 4774202 (1988-09-01), Pan et al.
patent: 4829482 (1989-05-01), Owen
patent: 4839705 (1989-06-01), Tigelaar et al.
patent: 4849369 (1989-07-01), Jeuch et al.
patent: 4851365 (1989-07-01), Jeuch
patent: 4855800 (1989-08-01), Esquivel et al.
S. M. Sze, "VLSI Technology", Second Edition, 1983, McGraw-Hill Book Company, New York, pp. 266-267 and 493-495.

Affiliated with

Also associated with

Rating

Cross-point contact-free array with a high-density floating-gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cross-point contact-free array with a high-density floating-gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cross-point contact-free array with a high-density floating-gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-828587