Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-03-28
2006-03-28
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S069000
Reexamination Certificate
active
07020012
ABSTRACT:
Cross point memory array using distinct voltages. The invention is a cross point memory array that applies a first select voltage on one conductive array line, a second select voltage on a second conductive array line, the two conductive array lines being uniquely defined. Additionally, an unselect voltage is applied to the unselected conductive array lines. The unselect voltage can be applied before, after or during the selection process. The unselect voltage can be approximately equal to the average of the first select voltage and the second select voltage.
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Chevallier Christophe J.
Longcor Steven W.
Rinerson Darrell
Ward Edmond R.
Nguyen Tan T.
Unity Semiconductor Corporation
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