Cross-fill pattern for metal fill levels, power supply...

Details Cross-fill pattern for metal fill levels, power supply... Cross-fill pattern for metal fill levels, power supply...

2006-05-02

2006-05-02

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S666000, C438S669000, C257S773000

Reexamination Certificate

active

07037820

ABSTRACT:
A cross-fill metal fill pattern technique is provided such that portions of a metal fill pattern are patterned to accomplish a secondary function. For instance, in the exemplary embodiments, ever other trace or line of interdigitated fingers is routed to a ground, while the interceding traces or lines of interdigitated fingers are routed to a power supply. In this way, a capacitor function is formed across the power supply, providing additional decoupling for the power supply. Moreover, a suitably tight cross-fill metal fill pattern (i.e., higher density of metal) provides an electrical shielding function for electromagnetic radiation passing therethrough.

REFERENCES:
patent: 6781238 (2004-08-01), Nonaka
Wolf, Stanley; “Silicon Processing for the VLSI Era,” v.2, 1990, p. 555-556.

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