Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Patent
1997-10-20
2000-05-30
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
438239, 438250, 438253, 438381, 438396, H01L 2120
Patent
active
06069050&
ABSTRACT:
A capacitor having a low voltage coefficient, even though one electrode is a semiconductor and one is a metal, is described. Two parallel plate capacitors are formed side by side and then cross-connected. The bottom plate of one of the capacitors is connected to the top plate of the other capacitor, and vice versa. This arrangement causes the two capacitors to be polarized in opposite directions at all times so that the individual voltage coefficients cancel each other and give the combined structure a value that is about 2 ppm/V. A process for manufacturing this capacitor is also described.
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Chen Ming-Jer
Hou Chin-Shan
Ackerman Stephen B.
Jr. Carl Whitehead
Saile George O.
Taiwan Semiconductor Manufacturing Company
Thomas Toniae M.
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