Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging radiant energy exposure
Patent
1998-10-30
2000-03-21
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging radiant energy exposure
430394, G03F 720
Patent
active
060401184
ABSTRACT:
A method (100) of providing critical dimension uniformity in a radiation sensitive film (104) includes the steps of forming (102) the radiation sensitive film (104) over a substrate (106) and exposing (110) the radiation sensitive film (104) to radiation (56) using a mask (50) having a pattern thereon, wherein a first feature (52) and a second feature (54) on the mask (50) are intended to provide the same critical dimension on the radiation sensitive film (104). The exposure step (110) creates a non-uniform exposure pattern (60) on the radiation sensitive film (104) corresponding to the mask pattern due to various anomalies in the exposure process or in the mask itself. A transferred first feature (84) critical dimension on the radiation sensitive film (104) which corresponds to the first mask feature (52) is larger than the second transferred feature (86) critical dimension which corresponds to the second mask feature (54) due to the radiation non-uniformities or imaging non-uniformities. The method (100) further includes exposing (140) the radiation sensitive film (104) to a blanket radiation exposure (150), wherein the blanket radiation exposure (150) provides effectively a greater dose to the first transferred feature (84) than the radiation dose to the second transferred feature (86) due to variations in a bleaching of the radiation sensitive film (104) at edges (130, 132) of the first and second transferred features (84, 86) due to the first exposure (110). Therefore the blanket exposure step (140) decreases the critical dimension of the first transferred feature (84) more than the critical dimension size of the second transferred feature (86), thereby reducing a difference in the critical dimension of the first and second transferred features (84, 86) which results in improved critical dimension uniformity.
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Advanced Micro Devices , Inc.
Duda Kathleen
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