Critical dimension control for integrated circuits

Details Critical dimension control for integrated circuits Critical dimension control for integrated circuits

2007-09-18

2007-09-18

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C430S316000

Reexamination Certificate

active

10931772

ABSTRACT:
Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon hard mask layer. The features of a pattern can be shrunk using a plasma etch to reduce the resist elements on the surface of the masking structure. Features in the pattern can also be enlarged by depositing polymer on the resist elements or by sloping an underlying layer. In one preferred embodiment, features of the pattern are shrunk before being enlarged in order to reduce line edge roughness.

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