Creation and removal of temporary silicon dioxide structures on

Details Creation and removal of temporary silicon dioxide structures on Creation and removal of temporary silicon dioxide structures on

1990-12-21

1991-12-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156653, 156657, 437238, B44C 122, C03C 1500, C03C 2506

Patent

active

050697471

ABSTRACT:
A process for creating and removing temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on existing permanent silicon dioxide structures that are exposed. The process comprises the steps of blanket depositing an ozone-TEOS silicon dioxide layer through chemical vapor deposition on top of the in-process integrated circuit, thus covering permanent structures formed from conventional silicon dioxides (e.g. TEOS and thermal oxides), etching the ozone-TEOS layer to create said temporary structures, and removing the temporary structures using dilute hydrofluoric acid.

REFERENCES:
patent: 4735680 (1988-04-01), Yen
patent: 4784718 (1988-11-01), Mitani et al.
patent: 4878996 (1989-11-01), Mitchell et al.
patent: 4996167 (1991-02-01), Chen
patent: 5037505 (1991-08-01), Tung

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