Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Layout generation
Reexamination Certificate
2011-06-28
2011-06-28
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Layout generation
C716S054000, C430S005000, C430S322000, C430S323000, C430S324000
Reexamination Certificate
active
07971160
ABSTRACT:
A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.
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Asai Satoru
Minami Takayoshi
Osawa Morimi
Dimyan Magid Y
Do Thuan
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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