Creating air gap in multi-level metal interconnects using...

Details Creating air gap in multi-level metal interconnects using... Creating air gap in multi-level metal interconnects using...

2005-03-15

2005-03-15

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S619000, C438S623000, C438S624000, C438S633000, C438S634000, C438S637000, C438S638000

Reexamination Certificate

active

06867125

ABSTRACT:
An embodiment of the present invention includes a method to form an air gap in a multi-layer structure. A dual damascene structure is formed on a substrate. The dual damascene structure has a metallization layer, a barrier layer, a sacrificial layer, and a hard mask layer. The sacrificial layer is made of a first sacrificial material having substantial thermal stability and decomposable by an electron beam. The sacrificial layer is removed by the electron beam to create the air gap between the barrier layer and the hard mask layer.

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patent: 6071805 (2000-06-01), Liu
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6413852 (2002-07-01), Grill et al.
patent: 6555467 (2003-04-01), Hsu et al.
patent: 20020158337 (2002-10-01), Babich et al.
patent: 20030203592 (2003-10-01), Kloster et al.
patent: 20040137728 (2004-07-01), Gallagher et al.

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